| PART |
Description |
Maker |
| NTE365 |
Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz
|
NTE[NTE Electronics]
|
| NTE366 |
Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz
|
NTE[NTE Electronics]
|
| NTE367 |
Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| IXFH26N49Q |
26 A, 490 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
| HPQ-05W |
380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS ROHS COMPLIANT, CASE AT577, 6 PIN
|
Mini-Circuits
|
| C391PS C391PC C391PD C391PE C391PM C391PN |
ECONOLINE: RTS & RTD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%
Phase Control SCR 490 Amperes Avg 1300-1800 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| SC15A-5SDAC-Z |
Power Module
Switch-Power Non-Isolated DC-DC Converters 5V to 1.3-3.5V 15A 1-OUTPUT DC-DC REG PWR SUPPLY MODULE
|
Bourns, Inc.
|
| S-AV17 E002849 |
RF POWER AMPLIFIER MODULE(HAM, VHF 50W FM RF POWER AMPLIFIER MODULE) 射频功率放大器模块（火腿，甚高频50瓦调频射频功率放大器模块
RF POWER AMPLIFIER MODULE(HAM/ VHF 50W FM RF POWER AMPLIFIER MODULE)
VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
